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Observation of metallic indium clusters in thick InGaN layer grown by metal chemical vapor depositio
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  • 相关项目：应用于紫外器件的AlGaN材料的生长机理和材料物理问题研究
同期刊论文项目
应用于紫外器件的AlGaN材料的生长机理和材料物理问题研究
期刊论文 26
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Reducing dislocations of Al-rich AlGaN by combining AlN buffer and AlN/Al0.8Ga0.2N superlattices
Elimination of crystallographic wing tilt of canti-bridged epitaxial laterally overgrown GaN films b
Growth of Highly Conductive n-Type Al0.7 Ga0.3N Film by Using AlN Buffer with Periodical Variation o
Reversible Carriers Tunnelling in Asymmetric Coupled InGaN/GaN Quantum Wells
The origin of wing tilt for uncoalesced GaN grown on maskless grooved sapphire fabricated by wet che
Effects of barrier growth temperature ramp-up time on the photoluminescence of InGaN/GaN quantum wel
Characteristics of the improved a-plane GaN films grown on r-plane sapphire with two-step AlN buffer
Anomalous tunneling effect on photoluminescence of asymmetric coupled double InGaN/GaN quantum wells
Characteristics of High In-content InGaN Alloys Grown by MOCVD
Luminescent characteristics of near ultraviolet InGaN/GaN MQWs grown on grooved sapphire substrates
n型AlGaN材料的电学和光学性质
AlN外延薄膜的生长和特征
Effect of growth temperature of initial AlN buffer on the structural and optical properties of Al-ri
Growth of semi-insulating GaN using N-2 as nucleation layer carrier gas combining with an optimized
Near ultraviolet InGaN/GaN MQWs grown on maskless periodically grooved sapphire substrates fabricate
The transport property of two dimensional electron gas in AlGaN/AIN/GaN structure
Three-Step Growth Optimization of AlN Epilayers by MOCVD
Lateral epitaxial overgrowth of GaN films on patterned sapphire substrates fabricated by wet chemica
使用AlN/GaN超晶格势垒层生长高Al组分AlGaN/GaN HEMT结构
Characteristics of GaN grown on 6H-SiC with different AIN buffers
AlGaN/AlN/GaN结构中二维电子气的输运特性
r面蓝宝石衬底上采用两步AlN缓冲层法外延生长a面GaN薄膜及应力研究