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电阻开关式非挥发性随机存储器的机理及其材料
  • ISSN号：1007-4252
  • 期刊名称：Journal of Functional Materials and Devices
  • 时间：2011
  • 页码：195-204
  • 分类：TP333.5[自动化与计算机技术—计算机系统结构;自动化与计算机技术—计算机科学与技术]
  • 作者机构：[1]杭州电子科技大学电子信息学院,杭州下沙高教园区310018, [2]浙江大学硅材料国家重点实验室,杭州玉泉310027
  • 相关基金：国家自然科学基金（No.60576063）; 浙江省科技计划（2008F70015、2009C31007）
  • 相关项目：金属氧化物ReRAM的稳定性和可靠性研究
作者： 季振国|陈伟峰|毛启楠|
关键词： 电阻式存储器, 非挥发性, 随机存储器, 电阻开关, ReRAM, non-volatile, random access memory, resistance switching
中文摘要：

在众多新型非挥发存储器中,电阻式存储器具有结构简单,存储密度高,读写速度快,数据保持时间长,制作方法与传统CMOS工艺兼容性好等优点成为研究的热点。本文简要回顾了电阻式存储器器件的结构、机制、材料以及制备方法,并讨论了电阻式存储器的单极性和双极性电阻开关特性,最后着重介绍了电阻开关特性的块体主导机制和界面主导机制。

英文摘要：

Among various new non-volatile memories,resistance random access memory（ReRAM） is a research hotspot due to its characteristics such as simple structure,high density,high operation speed,long retention time,good compatibility with traditional CMOS technologies,and so on.In this paper,the structures,materials,and preparation methods of ReRAM are briefly reviewed;then the behaviors of unpolar resistive switching and bipolar resistive switching are discussed;and finally the bulk control mechanism and the interface control mechanism of resistance switching behaviors are introduced.

同期刊论文项目
透明导电金属氧化物薄膜的P型掺杂研究
期刊论文 42 会议论文 2 著作 1
金属氧化物ReRAM的稳定性和可靠性研究
期刊论文 21 会议论文 7 专利 9 著作 1
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期刊信息
  • 《功能材料与器件学报》
  • 北大核心期刊（2011版）
  • 主管单位:中国科学院
  • 主办单位:中国材料研究学会 中国科学院上海微系统与信息技术研究所
  • 主编：邹世昌
  • 地址：上海市长宁路865号
  • 邮编：200050
  • 邮箱：jfmd@mail.sim.ac.cn
  • 电话：021-62511070
  • 国际标准刊号：ISSN：1007-4252
  • 国内统一刊号：ISSN：31-1708/TB
  • 邮发代号:
  • 获奖情况:
  • 美国Ei,美国CA，英国SA，俄罗斯PЖ的文献源期刊,中国科技论文统计源期刊、中国科学引文数据库来源期刊,中国学术期刊综合评价数据库来源期刊
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  • 被引量:3051