中文摘要：

用电子束蒸发技术在晶体及激光陶瓷两种基底上沉积了氧化铪（HfO2）单层膜，采用掠角x射线衍射（GIXRD）技术和纳米划痕仪对薄膜的晶向结构和力学特性进行了研究。实验结果表明，HfO2薄膜在单晶晶体和多晶陶瓷基底上均呈现多晶态结构，均呈（020）面择优生长，陶瓷基底上薄膜的择优取向更明显。膜基结合较差的晶体-HfO2体系上薄膜的衍射峰较多，膜基结合较好的陶瓷-HfO2体系上薄膜的衍射峰较少。对比两个基底和其上薄膜的X射线衍射（XRD）结果发现，晶体基底的单晶结构与其上薄膜的多晶结构晶态差异较大，导致其膜基间有较大的残余应力，所以其膜基结合力也较差，这种弱结合力导致基底对薄膜的束缚作用较小，其上薄膜具有更多的衍射峰；陶瓷基底的多晶结构与其上薄膜的多晶结构差异较小，导致其上薄膜的择优生长更强，更有效地消除了残余应力，所以陶瓷-HfO2体系的膜基结合力较晶体-HfO2体系好，这种较强的结合力限制了薄膜向更多HfO2晶向的发展，其上薄膜衍射峰较少。

英文摘要：

HfO2 thin films are deposited on the crystal and the laser ceramic by electron beam evaporation technology respectively. Grazing incidence X-ray diffraction （GIXRD） and nano-scratch tester are used to investigate the crystalline structures and mechanical properties of the films. The experimental results show that crystalline orientations of the HfO2 films on single crystal substrate and polycrystalline ceramic substrate are all polycrystalline structures, and have （020） preferred growth, while the films on ceramic structures have stronger preferred orientation. The crystal-HfO2 films with a worse adhesive force have more diffraction peaks, while the ceramic-HfO2 films with a better adhesive force have less diffraction peaks. Compared with the X-ray diffraction （XRD） results of two substrates and the films coated on them, the difference between single crystal structure of crystalline substrate and polycrystalline structure state of film is big, which contributes to a bigger residual stress, and a worse adhesive force between the crystal and the film. The weak binding force leads to small constraint effect of substrate on films. So, the films on the substrate of single crystal have more diffraction peaks. The difference between polycrystalline structure of ceramic substrate and the polycrystalline structure of films issmall. This similar crystalline state makes the preferred orientation of the films more obvious and weakens the residual stress. So the adhesive force between the ceramic substrate and the HfO2 film is relatively better than that of crystal-HfO2 system. The strong binding force limits the growth of crystal orientation of HfO2 films, and the diffraction peaks of the films are less.