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Improved Performance of GaN-Based Light-Emitting Diodes via AlInGaN/InGaN Electron-Emitting Layer
  • ISSN号：1882-0778
  • 期刊名称：Applied Physics Express
  • 时间：2012.10.10
  • 页码：1-3
  • 相关项目：Si衬底上InGaP/GaAs/Ge和InGaP/GaAs/SiSnGe/Ge多结太阳能电池材料生长与器件制备研究
作者： Changqing Chen|Zhihao Wu|Yang Li|Jin Xu|Wei Zhang|Hui Xiong|Yu Tian|Jiangnan Dai|Yanyan Fang|
同期刊论文项目
Si衬底上InGaP/GaAs/Ge和InGaP/GaAs/SiSnGe/Ge多结太阳能电池材料生长与器件制备研究
期刊论文 11 专利 7
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