中文摘要：

为表征Pb（Zr_（0.52）Ti_（0.48））O_3（PZT）薄膜的横向压电性能,以纯力场鼓包测试模型和铁电薄膜材料压电方程为基础,推导了PZT铁电薄膜的力电耦合鼓包本构模型。采用溶胶-凝胶法制备了PZT铁电薄膜,并通过化学腐蚀法获得PZT薄膜鼓包样品。在外加电压为0~14V的条件下进行鼓包测试。结果表明,在纯力场作用下,PZT薄膜的弹性模量和残余应力分别为91.9GPa和36.2MPa;随着电压从2V变化到14V,PZT薄膜的横向压电系数d31从-28.9pm/V变化到-45.8pm/V。本工作所发展的力电耦合鼓包测试技术及力电耦合鼓包本构模型为评价铁电薄膜材料的横向压电性能提供了一种有效的分析方法。

英文摘要：

On the measuring of transverse piezoelectric coefficients of Pb（Zr0.52Ti0.48）O3（PZT）thin films,we derived the mechano-electrical coupling bulge constitutive equations of PZT thin films on the basis of bulge test model and ferroelectric constitutive equations.The bulge samples were prepared by sol-gel and chemical etching methods.Mechano-electrical coupling bulge tests were performed by using modified force-electric experimental platform under the applied voltage between 0—14 V.The results showed that the elastic modulus and residual stress of PZT thin films were 91.9GPa and 36.2 MPa under pure force field,respectively.The transverse piezoelectric coefficients d31 of PZT thin films increased from-28.9pm/V to-45.8pm/V when the voltage increased from 2Vto 14 V.Our work provides an effective analysis method for the transverse piezoelectric properties of other ferroelectric thin film materials by using the modified mechano-electrical coupling bulge test and the corresponding constitutive equations.