为了提高有机电致发光器件OLED的发光效率,引入2T-NATA作为空穴注入层,制备了结构为ITO/2T-NATA(Xnm)/NPB(25nm)/Alq3:C545T(20nm:质量分数4.5%)/Alq3(30nm)/LiF(1nm)/Al(100nm)的绿光器件,其中X为空穴注入层2T-NATA厚度。分析了2T-NATA的蒸镀厚度分别0,5,10,15,20,25,30,35nm时器件的发光性能。结果表明,2T-NATA的HOMO能级较好的与ITO功函数匹配,降低了空穴注入势垒,引入空穴注入层2T-NATA提高了器件的发光亮度和效率。当2T—NATA厚度为15nm时,器件的效果最好,起亮电压只需2.87V,亮度最高达到18000cd/m^2,是不引入空穴注入层亮度的5倍多,在12v时发光效率可达11.4cd/A。
The hole injection materials 2T-NATA was introduced into green OLED to improve the light efficiency. The green OLED was prepared with a structure of ITO/2T-NATA ( X nm) /NPB (25 nm)/ Alq3: C545T (20 nm: mass fraction 4.5%) /Alq3 (30 nm) /LiF (1 nm) /Al(100 nm), and the X is the thickness of hole injection layer of OLED. The thickness of 2T-NATA, ranging from 0 to 35 nm with a step of 5 nm, was systematically analyzed from the aspect of electrolumineseence characteristic. The results show that 2T-NATA's HOMO level can reasonably match ITO work function, which reduces the hole-injecting barrier and improves the brightness and efficiency of devices. The maximum brightness of devices with 15 nm 2T-NATA acting as hole injection layer reached 18 000 cd/m2 at 12 V, which is nearly 5 times than that of the device without it. What's more, luminescence efficiency reaches 11.4 cd/A at 12 V.