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电泳沉积法制备纳米CoFe2O4厚膜
  • 期刊名称:电子元件与材料
  • 时间:0
  • 页码:29-32
  • 语言:中文
  • 分类:O482[理学—固体物理;理学—物理]
  • 作者机构:[1]华中科技大学电子科学与技术系,湖北武汉430074
  • 相关基金:国家自然科学基金资助项目(No.60871017)
  • 相关项目:电泳沉积法制备纳米磁电多铁性复合薄膜的研究
中文摘要:

利用电泳沉积法在Pt/Al2O3衬底上成功制备了纳米CoFe2O4厚膜,分析了电泳沉积纳米CoFe2O4厚膜的影响因素。利用Zeta电势测试仪测试了悬浮液的Zeta电势和电导率,利用X射线衍射仪和场发射扫描电子显微镜分析了厚膜的组分和微观形貌,利用振动样品磁强计和漏电流测试仪测试了厚膜的性能。结果表明,电泳沉积法制备CoFe2O4厚膜是可行的,且沉积条件的选择对形成良好CoFe2O4厚膜有重要影响。CoFe2O4厚膜的矫顽力和比饱和磁矩分别为225.1 kA/m和31.17 A·m2/kg,漏电流密度为3.0×10–6 A/cm2。

英文摘要:

Electrophoretic deposition was utilized for preparation of nano-CoFe2O4 thick film on Pt/Al2O3 substrates.The influence factors of electrophoretic deposition of nano-CoFe2O4 thick film were investigated.The Zeta potential value and conductivity of CoFe2O4 suspensions were measured to reflect suspension stability.The components and micro-morphology of CoFe2O4 thick film were analyzed by X-ray diffraction and field emission scanning electron microscope.The ferromagnetic properties and leakage current of CoFe2O4 thick film measured by vibrating sample magnetometer and leakage current test instrument were also studied.The results show that electrophoretic deposition of CoFe2O4 thick film is feasible and the choice of deposition conditions is very important to the formation of good CoFe2O4 thick film.The coercive force and specific saturation magnetic moment of CoFe2O4 thick films are 225.1 kA/m and 31.17 A·m2/kg.The leakage current density is 3.0×10–6 A/cm2.

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