位置：成果数据库 > 期刊 > 期刊详情页
Wafer-scale graphene on 2 inch SiC with uniform structural and electrical characteristics
  • ISSN号：1001-6538
  • 期刊名称：Chinese Science Bulletin
  • 时间：2012.8.8
  • 页码：3022-3025
  • 相关项目：自由站立石墨烯的制备和物理特性研究
作者： Jia YuPing; Guo LiWei; Lin JingJing; 等|
同期刊论文项目
自由站立石墨烯的制备和物理特性研究
期刊论文 14
同项目期刊论文
Towards intrinsic magnetism of graphene sheets with irregular zigzag edges
A comparison of the ?eld emission characteristics of vertically aligned graphene sheets grown on dif
Fabrication of vertically aligned graphene sheets on SiC substrates
Fabrication and characterization of graphene derived from SiC
Preparation of Quasi-Free-Standing Graphene with a Super Large Interlayer Distance by Methane Interc
Anharmonic phonon effects in Raman spectra of unsupported vertical graphene sheets
Approaching the Intrinsic Electron Field-Emission of a Graphene Film Consisting of Quasi-Freestandin
Effect of 6H-SiC (11(2)over-bar0) substrate on epitaxial graphene revealed by Raman scattering
A comparison of the field emission characteristics of vertically aligned graphene sheets grown on different SiC substrates
Influence of defects in SiC （0001） on epitaxial graphene
Effect of 6H-SiC （1120） substrate on epitaxial graphene revealed by Raman scattering