中文摘要：

采用高效、低成本的紫外压印技术（UV—IL）在2in．Si／SiO2基Ti／TiN／Si2Sb2Te5（SST）多层膜表面制备了密度为3．8M／In^2的AMONIL点阵结构，并通过反应离子刻蚀得到相变材料SST阵列；电阻与脉冲宽度特性测得SST基PCRAM存储单元SET／RESET电阻值变化约30倍，Ⅰ—Ⅴ特性表明，阈值电压为1．18V。此外，时间分辨XRD原位加热情况下SST薄膜结构变化说明，SST材料的相变发生在200℃～300℃之间。

英文摘要：

The Si2Sb2Te5 （SST） array was fabricated by UV-imprint lithography （UV-IL） instead of optical lithography and PCRAM memory cell with 18M/Inch^2 was constructed, the array is the size of 2 inches. Memory switching from high resistance state to low resistance state has been achieved, with a resistance ratio of 30 has been achieved. In typical Ⅰ-Ⅴ curve, display threshold voltage to be 1.18 V. Structural transformation of SST film in heating process was in situ studied by means of time-resolved X-ray diffraction. This shows that the SST material phase change occurred in the range of 200 ℃ - 300 ℃.