位置：成果数据库 > 期刊 > 期刊详情页
Enhanced Anisotropic Effective g Factors of an Al10.25Ga0.75N/GaN Heterostructure Based Quantum Poin
  • ISSN号：1530-6984
  • 期刊名称：Nano Letters
  • 时间：2013.10
  • 页码：4654-4658
  • 相关项目：III族氮化物半导体异质结构中的自旋轨道耦合效应及其调控
作者： Liu, Sidong|Ge, Weikun|Xu, Fujun|Shen, Bo|
同期刊论文项目
III族氮化物半导体异质结构中的自旋轨道耦合效应及其调控
期刊论文 29 会议论文 9
同项目期刊论文
Localized deep levels in AlxGa1-xN epitaxial films with various Al compositions
Evidence of Type-II Band Alignment in III-nitride Semiconductors: Experimental and theoretical inves
Identification of Helicity-Dependent Photocurrents from Topological Surface States in Bi2Se3 Gated b
Hysteresis phenomena of the two dimensional electron gas density in lattice-matched InAlN/GaN hetero
High mobility AlGaN/GaN heterostructures grown on Si substrates using a large lattice-mismatch induc
Epitaxial evolution on buried cracks in a strain-controlled AlN/GaN superlattice interlayer between
Shear strain induced modulation to the transport properties of graphene
Electronic properties of polycrystalline graphene under large local strain
Leakage current reduction by thermal oxidation in Ni/Au Schottky contacts on lattice-matched In0.18A
Formation of p-n-p junction with ionic liquid gate in graphene
Generation of Rashba spin？orbit coupling in CdSe nanowire by ionic liquid gate
Epitaxial growth of AlN films on sapphire via a multilayer structure adopting a low- and high-temper
Epitaxial evolution on buried cracks in a strain-controlled AIN/GaN superlattice interlayer between AIGaN/GaN multiple quantum wells and a GaN template
Localized deep levels in AlxGa1-xN epitaxial films with various Al compositions