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Band gap bowing and crossing of BxGal_xN alloy investigated by hybrid functional method
  • ISSN号:1674-4926
  • 期刊名称:《半导体学报:英文版》
  • 时间:0
  • 分类:O174[理学—数学;理学—基础数学] TG131[金属学及工艺—合金;一般工业技术—材料科学与工程;金属学及工艺—金属学]
  • 作者机构:[1]School of Electric Power Engineering, China University of Mining & Technology, Xuzhou 221116, China, [2]Department of Physics, School of Sciences, China University of Mining and Technology, Xuzhou 221008, China
  • 相关基金:Project supported by the Fundamental Research Funds for the Central Universities (No. 2010LKWL03), the Special Fund for Theoretical Physics (No. 11047130), and the National Natural Science Foundation of China (No. 11104345).
中文摘要:

The electronic properties of zinc-blende BxGa1-xN alloys are comparatively investigated by employing both the Perdewe-Burkee-Ernzerhof generalized-gradient approximation(PBE-GGA) and the Heyd-ScuseriaErnzerhof screened hybrid functional methods(HSE06).HSE06 reproduced much closer ground-state properties to experiments.Large and composition-dependent bowing parameters bΓ for the direct band gaps were obtained from both PBE and HSE06.The crossover composition where alloy switches from direct to indirect was predicted to occur at very similar x from PBE and HSE06.We can obtain direct gap BxGa1-xN with a gap value much larger than that of GaN by alloying x < 0.557 boron into GaN.

英文摘要:

The electronic properties of zinc-blende BxGal-xN alloys are comparatively investigated by employ- ing both the Perdewe-Burkee-Ernzerhof generalized-gradient approximation (PBE-GGA) and the Heyd-Scuseria- Ernzerhof screened hybrid functional methods (HSE06). HSE06 reproduced much closer ground-state properties to experiments. Large and composition-dependent bowing parameters br for the direct band gaps were obtained from both PBE and HSE06. The crossover composition where alloy switches from direct to indirect was predicted to occur at very similar x from PBE and HSE06. We can obtain direct gap BxGal-xN with a gap value much larger than that of GaN by alloying x 〈 0.557 boron into GaN.

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期刊信息
  • 《半导体学报:英文版》
  • 中国科技核心期刊
  • 主管单位:中国科学院
  • 主办单位:中国电子学会 中国科学院半导体研究所
  • 主编:李树深
  • 地址:北京912信箱
  • 邮编:100083
  • 邮箱:cjs@semi.ac.cn
  • 电话:010-82304277
  • 国际标准刊号:ISSN:1674-4926
  • 国内统一刊号:ISSN:11-5781/TN
  • 邮发代号:2-184
  • 获奖情况:
  • 90年获中科院优秀期刊二等奖,92年获国家科委、中共中央宣传部和国家新闻出版署...,97年国家科委、中共中央中宣传部和国家新出版署三等奖,中国期刊方阵“双效”期刊
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  • 被引量:7754