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High brightness InGaN-based yellow light-emitting diodes with strain modulation layers grown on Si s
  • ISSN号：0947-8396
  • 期刊名称：Applied Physics A-Materials Science & Processi
  • 时间：2014.2.2
  • 页码：8283-8283
  • 相关项目：应力对硅衬底GaN基LED器件光电性能影响的研究
作者： Jianli Zhang|Chuanbing Xiong|Junlin Liu|Zhijue Quan|Li Wang|Fengyi Jiang|
同期刊论文项目
应力对硅衬底GaN基LED器件光电性能影响的研究
期刊论文 21 专利 7
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