采用WO3和ZrO2复合陶瓷靶材,以射频磁控溅射法在石英基片上沉积制备了ZrW2O8薄膜。利用X射线衍射仪(XRD)、表面粗糙轮廓仪和扫描电子显微镜(SEM),研究了不同工艺参数和不同退火温度对ZrW2O8薄膜的相组成、沉积速率和表面形貌的影响。采用高温X射线衍射和PowderX软件研究薄膜的负热膨胀特性。实验结果表明:随着溅射功率的增加,薄膜沉积速率增加;而随着工作气压的增加,薄膜沉积速率先增加后减小;磁控溅射沉积制备的ZrW2O8薄膜为非晶态,表面平滑、致密,随着热处理温度的升高,薄膜开始结晶且膜层颗粒增大;在740℃热处理3min后得到膜层颗粒呈短棒状的三方相ZrW2O8薄膜,在1200℃密闭条件下热处理3min淬火后得到膜层颗粒呈球状的立方相ZrW2O8薄膜,且具有良好的负热膨胀特性。
The ZrW2O8 films were grown by RF magnetron sputtering of WO3 and ZrO2 composite ceramic target on glass substrates.The films were characterized with X-ray diffraction(XRD),and scanning electron microscopy(SEM).The results show that the deposition conditions and annealing temperature strongly affect the surface morphology and properties of the films.For instance,the deposition rate increases with the increase of RF power;and as the working pressure rises up,it firstly increases and then drops down.As the an...