中文摘要：

利用射频磁控溅射技术在玻璃基片上制备了镓掺杂氧化锌（GZO）透明导电薄膜，研究了沉积温度对GZO薄膜的结构、光学和电学性能的影响。结果表明：所制GZO薄膜具有（002）择优取向的六角纤锌矿结构，其折射率表现为正常色散特性，随着沉积温度的升高，所制薄膜的可见光区平均透过率单调增加，电阻率先减小后增大，晶粒尺寸和品质因数先增大后减小。当沉积温度为400℃时，所制GZO薄膜的晶粒尺寸最大（75．5nm）、电阻率最低（1．27×10^-3Ω·cm）、品质因数最高（699．2S／cm），具有最佳的光电综合性能。

英文摘要：

Transparent conductive Ga-doped ZnO （GZO） thin films were prepared on glass substrates by radio-frequency magnetron sputtering technique. The effects of deposition temperature on the structure, optical and electrical properties of the GZO films were investigated. The results show that all the prepared GZO thin films are polycrystalline in nature having a hexagonal wurtzite type crystal structure with a preferred grain orientation in the （002） direction. And the obtained thin films exhibit the normal dispersion characteristic in visible region. With the increase of deposition temperature, the average visible transmittance of the prepared thin films increases monotonically, the resistivity decreases firstly and then increases, and the crystallite size and figure of merit increase initially and then decrease. The GZO thin films prepared at the deposition temperature of 400 ℃ exhibit the best photoelectric properties with the maximum erystallite size of 75.5 nm, the lowest resistivity of 1.27×10^-3Ω·cm and the highest figure of merit （699.2 S/cm）.