中文摘要：

运用有限元软件COMSOL Multiphysics4．3a对多晶硅定向凝固过程进行了全局瞬态模拟，在多品硅铸锭炉顶部加热器与侧部加热器的垂直距离分别为60、150、300mm时，分析了其对多晶硅熔化以及结晶初期的影响。结果表明：距离为60mm时硅料熔化所需时间最长，而距离为150、300mm时硅料熔化时间与其相比分别少34、60min；对于结晶初期的固液界面，距离为60mm时固液界面接近于平面，有利于多晶硅晶体生长，而距离为150、300mm时同液界面均呈现明显的凸形．并且后者比前者凸起的程度更大，会降低多晶硅锭的质量。

英文摘要：

The global transient simulations of the directional solidification process for multicrystalline silicon were carried out by using finite element software COMSOL Multiphysics 4.3a. When the vertical distance between the top and side heater of the furnace for multicrystalline silicon was 60, 150, 300 mm respectively, the effects of it on multicrystalline silicon melting and the crystallization in initial stage were analyzed. The results show that the melting time of the silicon material is the longest when the distance is 60 mm. When the distance is 150mm and 300 mm, the melting time of the silicon material has decreased respectively by 34 min and 60 min compared with that of the distance of 60 mm. For the solid-liquid interface at the begirming of crystallization, when the distance is 60 mm, the solid-liquid interface is close to the plane which is conducive to the growth of multicrystalline silicon. While the distance is 150 mm and 300 mm, the solid-liquid interface is obviously convex which can reduce the quality ofmulticrystalline silicon ingot, and the latter is more convex than the former.