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氮掺杂硅铝固载TiO2多孔材料的制备及其光催化性能分析
  • ISSN号:1005-023X
  • 期刊名称:《材料导报》
  • 时间:0
  • 分类:O643.3[理学—物理化学;理学—化学]
  • 作者机构:陕西科技大学材料科学与工程学院,陕西西安710021
  • 相关基金:国家自然科学基金项目(51171096);陕西省科技厅自然科学基金项目(2014JM6223)
中文摘要:

以正硅酸乙酯、钛酸丁酯为硅胶固载TiO2的前驱物原料,以不同比例的硫酸和硝酸的混合酸既做掺杂氮、硫源,同时又做溶胶凝胶的引发剂.采用溶胶凝胶法和水热蒸压法原位共生合成产物前躯体,再在氮气气氛下烧结制得硅胶固载/氮、硫共掺TiO2光催化剂(N、S/TiO2-SiO2).通过TG-DSC、XRD、XPS、FT-IR和UV-vis等测试手段对样品的物相、形貌、结晶结构等进行分析表征.通过光催化降解实验来考察制备样品的光催化性能,以此研究非金属元素共掺杂对改性TiO2光催化性能的影响.研究结果表明:氮、硫共掺杂TiO2晶粒处于硅胶介孔骨架结构中,成功实现了N和S的有效共掺杂,拓宽了TiO2光催化剂的光响应范围,达到了光催化红移和高效利用太阳光的目的.而且产物纯度高、结晶状况好.在n(Ti)∶n(Si)=1∶4、n(Ti)∶n(N、S)=1∶0.05、烧结温度700℃时,可生成光催化性能最佳的硅胶固载TiO2介孔材料.

英文摘要:

The silicon carrier/N,S codoped titanium dioxide photocatalysts were synthesized by solgel and hydrothermal autoclave method in situ symbiosis precursors,using ethyl silicate,butyl titanate as silicone solid precursors of TiO2 materials,with different proportions of a mixture of sulfuric acid and nitric acid as the nitrogen and sulfur source,and as the sol gel initiator as well.And then sintered under nitrogen atmosphere to obtain the nitrogen and sulfur codoped TiO2 photocatalyst with silica carrier(N,S/TiO2-SiO2).The phase,morphology,structure and microstructure of the samples were analyzed by means of DSC-TG,XRD,XPS,FT-IR and UV-vis methods. By means of photocatalytic degradation experiments,the photocatalytic performance of the samples were investigaed,in order to study the influence of doping nonmetallic elements on the modified TiO2.The results showed that the N,S/TiO2-SiO2 grain was in mesoporous silica skeleton structure,successfully realized the effective of N and S codoping,widened the light response range,and reached the photocatalytic redshift and the purpose of efficient use of the sunlight.The samples had high purity and good crystallization conditions,and could generate the best photocatalytic properties when the Ti/Si mole ratio was 1 ∶ 4,the Ti/(N、S) mole ratio was 1 ∶ 0.05 and the sintering temperature was 700 ℃.

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期刊信息
  • 《材料导报:纳米与新材料专辑》
  • 主管单位:重庆西南信息有限公司(原科技部西南信息中心)
  • 主办单位:重庆西南信息有限公司(原科技部西南信息中心)
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  • 地址:重庆市渝北区洪湖西路18号
  • 邮编:401121
  • 邮箱:matreved@163.com
  • 电话:023-67398525
  • 国际标准刊号:ISSN:1005-023X
  • 国内统一刊号:ISSN:50-1078/TB
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  • 被引量:3397