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中文摘要：
用脉冲激光沉积法在硅衬底上沉积GaN薄膜，为了减小Si衬底与GaN薄膜之间的热失配和晶格失配引入SiC缓冲层。脉冲激光沉积后的GaN薄膜是非晶结构，将样品在氨气氛围中在950℃下退火15min。得到结晶的GaN薄膜。并用X射线衍射、原子力显微镜、傅立叶红外吸收谱、光致发光谱研究了SiC缓冲层对GaN薄膜的结晶、形貌和光学性质的影响。
英文摘要：
GaN films were deposited on Si（111） substrate by pulsed laser deposition（PLD）.SiC buffers were introduced to decrease the effects of the lattice mismatch and thermal expansion coefficient difference between GaN and Si.The GaN films deposited on Si substrate by pulsed laser deposition is amorphous.The GaN films have been crystallized by annealling at 950℃ in ammonia （NH3） ambience for 15min.The effects of SiC buffer on the GaN films were studied by X-ray diffraction（XRD） analysis,atomic force microscopy（AFM）,Fourier transform infrared（FTIR） and photoluminescence（PL）.
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