中文摘要：

采用无电金属沉积法在硅衬底上制备出了大面积规整的硅纳米线阵列,并对其形貌控制的影响因素和形成机理进行了研究。用扫描电子显微镜（SEM）、X射线衍射仪（XRD）对硅纳米线阵列和相应银枝晶的形貌和结构进行了表征。结果表明,硅纳米线阵列的形貌受水热体系中溶液配比、温度和时间的影响,在温度为50℃、HF和AgNO3浓度分别为4.6和0.02mol/L的条件下,容易得到大面积排列规整的硅纳米线阵列,并且硅纳米线的长度为30～50μm,直径为200nm左右。无电金属沉积法为硅纳米线及其阵列的制备提供了一种设备简单、条件温和的制备方法。

英文摘要：

Large-area regular silicon nanowire arrays（SiNWs） were prepared on silicon substrate by electroless metal deposition method under hydrothermal conditions.Mechanism and effects of morphology control of SiNWs were studied.Morphologies and structures of SiNWs and Ag dendritic crystal were characterized by scanning electron microscopy（SEM） and X-ray diffraction（XRD）.The results showed that morphology of SiNWs could be influenced by solution ratio,temperature and reacting time of hydrothermal system.Large-area SiNWs,which the length is 30-50 μm and the diameter is about 200nm,can be obtained on condition that temperature is 50℃,and concentrations of HF and AgNO3 are 4.6 and 0.02mol/L,respectively.The electroless metal deposition method is a kind of simple,moderate technology for preparation of silicon nanowires and SiNWs.