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阻变式存储器存储机理
  • ISSN号：0379-4148
  • 期刊名称：《物理》
  • 时间：0
  • 分类：TP333[自动化与计算机技术—计算机系统结构;自动化与计算机技术—计算机科学与技术] TP333.4[自动化与计算机技术—计算机系统结构;自动化与计算机技术—计算机科学与技术]
  • 作者机构：[1]中国科学院微电子研究所纳米加工与新器件集成技术实验室,北京100029
  • 相关基金：国家重点基础研究发展计划（批准号：2006CB302706）和国家自然科学基金（批准号：90607022,90401002,90207004,60236010,60506005,60390071）资助项目.
作者： 王永[1], 管伟华[1], 龙世兵[1], 刘明[1], 谢常青[1]
关键词： 非挥发性, 阻变式存储器(RRAM), 综述, 空间电荷限制电流(SCLC), 细丝, non-volatile, resistive random access memory （RRAM）, review, space charge limited current （ SCLC ） , filament
中文摘要：

阻变式存储器（resistive random accessmemory，RRAM）是以材料的电阻在外加电场作用下可在高阻态和低阻态之间实现可逆转换为基础的一类前瞻性下一代非挥发存储器．它具有在32nm节点及以下取代现有主流Flash存储器的潜力，成为目前新型存储器的一个重要研究方向．但阻变式存储器的电阴转变机理不明确，制约它的进一步研发与应用．文章对阻变式存储器的体材料中几种基本电荷输运机制进行了归纳，总结了目前对阻变式存储器存储机理的理论模型．

英文摘要：

Resisitive random access memories （RRAMs） are one of the most promising next - generation non - volatile memory devices, based on reversible switching between high and low resistance states by the application of an external electric field. They have been widely studied as a remarkable new type of memory device, due to their potential for scaling down beyond the 32nm node limit to replace current mainstream flash memory devices. However, controversy about the resistance switching mechanism of RRAMs has severely limited their further development and application. In this article certain essential models of the charge-transportation in the bulk material are described, and present theories explaining the resistance switching mechanism are also reviewed.

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期刊信息
  • 《物理》
  • 北大核心期刊（2011版）
  • 主管单位:中国科学院
  • 主办单位:中国物理学会 中国科学院物理研究所
  • 主编：朱星
  • 地址：北京603信箱
  • 邮编：100190
  • 邮箱：physics@aphy.iphy.ac.cn
  • 电话：010-82649470 82649266
  • 国际标准刊号：ISSN：0379-4148
  • 国内统一刊号：ISSN：11-1957/O4
  • 邮发代号:2-805
  • 获奖情况:
  • 2002年中国科协优秀期刊三等奖,2000年度中科院优秀期刊一等奖,2001年入选“中国期刊方阵”,中国期刊方阵“双效”期刊
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  • 被引量:8902