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Effects of Al0.3Ga0.7As interlayer with pulsed atomic layer epitaxy on heterogeneous integration of
  • 期刊名称：Journal of Alloys and Compounds
  • 时间：2014.3.3
  • 页码：1-4
  • 相关项目：Si衬底上InGaP/GaAs/Ge和InGaP/GaAs/SiSnGe/Ge多结太阳能电池材料生长与器件制备研究
作者： Shichuang Sun|Zhiqiang Qi|Huiquan Chen|Xuehua Wang|Wu Tian|Feng Wu|Zhihao Wu|Jiangnan Dai|Changqing Chen|
同期刊论文项目
Si衬底上InGaP/GaAs/Ge和InGaP/GaAs/SiSnGe/Ge多结太阳能电池材料生长与器件制备研究
期刊论文 11 专利 7
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