中文摘要：

采用磁控溅射的方法制备了CoFe/CrPt钉扎的交换偏置体系,用外加磁场真空退火以获得钉扎场。通过把反铁磁的FeMn掺入到该钉扎体系中发现,约0.7nm厚度的FeMn掺入在CoFe/CrPt的界面时,可以使体系的钉扎场从原来的5.6×10^3A/m增加到1.55×10^4A/m,而体系的Blocking温度仍然可以达到600℃。

英文摘要：

CoFe/CrPt exchange biased system was prepared by magnetron sputtering. In order to appear pinning effect, the films were annealed in a vacuum with applied magnetic field. By introduce antiferromagnetic FeMn into the system, we found that about 0. 7nm thickness FeMn into the interface of CoFe/CrPt increase the pinning field from the initial 5.6 × 10^3A/m to 1.55 × 10^4A/m, and the high Blocking temperature of about 600℃ can also be kept.