中文摘要：

采用磁控溅射离子镀制备Cr-N薄膜,研究基体偏压对Cr-N薄膜组织结构和性能的影响。分别用辉光放电光电子谱（GDOES）、场发射扫描电镜（FESEM）和X射线衍射（XRD）分析薄膜成分和组织结构,显微硬度计测量薄膜硬度。结果表明,薄膜为非化学计量比的Cr-N薄膜,N/Cr原子比均小于0.25,薄膜主要以Cr的衍射峰为主。在偏压达到60 V后薄膜显示了较高的硬度（〉25 GPa）,其归因于离子轰击导致的薄膜的致密度的提高。偏压超过60 V后,致密度达到饱和,硬度增加不明显。

英文摘要：

Cr-N films were prepared by magnetron sputtering ion plating.Effect of bias voltage on microstructure and properties was investigated.The composition and microstructure of the films were analyzed using GDOES,FESEM and XRD,respectively.Microhardness tester was used to measure the films hardness.The results show that the films are non-stoichiometric Cr-N films with a nitrogen-to-chromium atomic ratio of less than 0.25.The film is mainly dominated by the diffraction peak of Cr.The film shows a hardness higher than 25 GPa when the bias voltage increases to 60V which is due to the films density increasing by ion bombardment.The density becomes saturated and the hardness doesn＇t increase when the bias voltage is higher than 60V.