中文摘要：

以红磷、锡和四碘化锡为原料制备黑磷，并用黑磷（BP）纳米材料制作场效应管，用X射线衍射谱（XRD）和光学显微镜（OM）分析了BP样品的结构和形貌，并测试其输出特性曲线和转移特性曲线。BP样品厚度为12nm，通过计算，其电子迁移率μe=248cm^2／Vs，电流开关比为-10^3。结果表明，基于BP纳米材料场效应管具有较好电子迁移率和开关比，为BP成为未来光电器件备选材料研究奠定基础。

英文摘要：

With red phosphorus, Sn and SnI4 as raw material to produce a black phosphorus, The field effect tube was made by using the nano materials of black phosphorus （BP）. Optical microscope（OM） and X-ray diffraction（XRD） were used to characterize the morphology and microstructures of the obtained samples. The output and transfer characteristics were tested respectively. The electronic mobility was 248 cm^2/Vs and ion/off ratio was -10^3 when BP sample thickness was 12 nm. The result shows that black phosphorus nanophase materials field effect transistor have good ion/off ratio and electron mobility and black phosphorus will be the foundation for future optoelectronic devices as alternative materials.