采用射频磁控溅射法成功地在多孔La0.7Sr0.3Cr0.5Mn0.5O3-δ(LSCM7355)阳极基底上制备了致密的LSGM电解质薄膜层。研究结果表明,当溅射功率为210W、基底温度为300℃、溅射气氛氩气压强为5Pa、溅射时间为12h,得到表观形貌较好、厚度约为10μm的LSGM电解质薄膜。在1000℃空气气氛中退火2h后,电解质薄膜物相结构符合多晶态钙钛矿型结构。
A dense and crack-free La0.9Sr0.1Ga0.8Mg0.2O3-δ thin film has been prepared by RF magnetron sputtering method on porous LSCM7355 anode substrates.The film with the good apparent morphology and a thickness about 10μm was obtained when the operating parameters fixed as follows: the sputtering power is 210W,the temperature of substrates is 300℃,the sputtering pressure is 5Pa and the sputtering time span is 12h.The polycrystalline perovskite type structure was obtained after the film annealed at 1000℃ for 2h in air.