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中文摘要：
基于中芯国际40 nm工艺制备的64 Mbit相变存储器,设计并进行了两组对比实验。分别使用不同幅值和脉宽的RESET电流脉冲对存储器单元进行疲劳操作,对相变存储器单元的疲劳性能与RESET操作电流的关系进行了研究。实验结果表明,存储单元的疲劳寿命和RESET脉冲幅值的平方呈反比关系,和脉冲宽度呈反比关系。在相变存储器的操作过程中,高阻态下的电阻值出现先减小后增大的漂移现象,这是因为操作电流会对相变材料组分产生影响,在相变材料层中会出现逐渐增大的孔洞,孔洞最终导致相变器件失效,与实验中高阻态阻值漂移现象相吻合,同时可以用来预测存储单元的疲劳寿命。
英文摘要：
Two sets of experiments were designed and performed on 64 Mbit phase change memory based on SIMIC 40 nm process. In order to investigate the relationship between RESET current pulse and endurance characteristic of phase change memory,the memory cells were programmed with current pulse of different amplitude and width and then recorded the lifetime of the memory cells. The experimental results show that the lifetime of phase change memory cell is inversely proportional to the square of amplitude and the width of RESET current pulse,respectively. During the operating cycling of phase change memory,the resistance of RESET state decreased firstly and then increased sharply until cell failed because the operating current can cause material segregation and can gradually cause void in phase change material leading the final failure of memory cells. The experiment data is in conformity with the phenomenon and can be used to predict the lifetime of memory cells.
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