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中文摘要：
针对适用于电力电子器件结温模拟和探测方法,分别采用RC热网络法、有限元（FEM）数值计算法、热敏电参数法和红外热探测法4种结温分析及探测方法在同样加热电流时对绝缘栅双极型晶体管（IGBT）结温特性进行了深入比对研究。比对研究结果表明在很多对温度分布不要求精确确定的工程应用场合,可用RC热网络模型法和热敏电参数法进行模拟和间接测量即可,而在对芯片表面温度分布要求精确确定的场合,应使用FEM数值计算法和红外热探测法进行精确模拟和非接触式测量,且该两种方法还可用于模块失效分析、寿命预测和可靠性评估分析和建模研究。
英文摘要：
The methods to simulation and detection of the junction temperature of power electronic devices were presented.A detail compare study was made on the four junction temperature simulation and detection method of Insulated Gate Bipolar Transistor（IGBT） module power electronic devices,namely the RC compact thermal component network method,the temperature sensitive of electrical parameter method,the Finite Element Method（FEM） numerical calculation method,the high speed infrared thermal imaging real-time detection method at the same current.The former two methods suit many engineering area,while the later two methods suit these areas which the accurate junction field distributing profile is required,and also can be implemented in failure mechanism,lifetime predicting and reliability assessment.Also the simulation results are observed to mutually agree with experimental results.
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