中文摘要：

首先论述了Al GaN/GaN高电子迁移率晶体管（HEMT）在微波大功率领域的应用优势和潜力;其次,介绍并分析了影响Al GaN/GaN HEMT性能的主要参数,分析表明要提高Al-GaN/GaN HEMT的频率和功率性能,需改善寄生电阻、电容、栅长和击穿电压等参数。然后,着重从材料结构和器件工艺的角度阐述了近年来Al GaN/GaN HEMT的研究进展,详细归纳了目前主要的材料生长和器件制作工艺,可以看出基本的工艺思路是尽量提高材料二维电子气的浓度和材料对二维电子气的限制能力的同时减小器件的寄生电容和电阻,增强栅极对沟道的控制能力。另外,根据具体情况调节栅长及沟道电场。最后,简要探讨了Al GaN/GaN HEMT还存在的问题以及面临的挑战。

英文摘要：

The application advantages and the great potential of AlGaN/GaN high electron mobi-lity transistors（HEMTs）in the high power microwave field are introduced firstly.The major parameters affecting the performance of the AlGaN/GaN HEMT are analyzed,from which it can be seen that the main parameters,such as the parasitic resistance,parasitic capacitance,gate length,breakdown voltage and other parameters,must be enhanced in order to improve the performance of the device.And then the latest research progress on the process of AlGaN/GaN HEMTs is reviewed in detail with focus on material structures and device technologies,and the major material growth and device fabrication technology are summed up comprehensively.The discussion indicates that the basic idea of the fabrication is increasing the density of the two-dimensional electron gas（2DEG）and the limiting capability of the material on the 2DEG as far as possible,meanwhile,trying to reduce the parasitic resistance and parasitic capacitance,and enhance the control capability of the gate over the channel.In addition,the gate length and channel electric field are adjusted according to the specific circumstances.Finally,the problems and challenges for the development of the device are discussed briefly.