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Enhanced hole concentration through Ga doping and excess of Mg and thermoelectric properties of p-ty
  • ISSN号：0966-9795
  • 期刊名称：Intermetallics
  • 时间：2013
  • 页码：352-361
  • 相关项目：掺杂局域共振态效应结合原位相分离纳米结构提高Mg2Si1-xSnx基材料热电性能研究
作者： Li, Han|Yan, Yonggao|Tang, Xinfeng|Uher, Ctirad|
同期刊论文项目
掺杂局域共振态效应结合原位相分离纳米结构提高Mg2Si1-xSnx基材料热电性能研究
期刊论文 12 获奖 1
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