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First-principles prediction of the negatively-charged nitrogen-silicon-vacancy center in cubic silic
  • ISSN号：0021-8979
  • 期刊名称：Journal of Applied Physics
  • 时间：0
  • 页码：043917-
  • 相关项目：C/SiC纳米管异质结和量子点的界面结构及电子特性的理论研究
作者： Pan, Fengchun|Zhao, Mingwen|Mei, Liangmo|
同期刊论文项目
C/SiC纳米管异质结和量子点的界面结构及电子特性的理论研究
期刊论文 21
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