中文摘要：

文中基于多种理论模型构建了4H-SiC SAM APD结构紫外光电探测器的基本物理模型.模拟研究了包括反向伏安特性、离化率、光谱响应在内的光电效应特性,并通过改变SAM结构各层厚度,得到了厚度与击穿电压、光谱响应的关系,从结果可以看出：减小P＋层厚度、增大N、N＋层厚度可有效增大光电流,提高探测器性能.

英文摘要：

The paper constructs a basic physical model of the 4H-SiC SAM APD structure ultraviolet photodetector based on a variety of theoretical models. Simulation study including some photoelectric effect characteristics such as bias I-V characteristic, ionization rate and spectral response. The relationship between the thickness with the breakdown voltage and the spectral response is obtained by changing the thickness of each layer of the SAM structure.Eventually, an important conclusion is obtained： Decreasing P＋ layer＆#39;s thickness and increasing N and N＋ layer＆#39;s thickness can effectively increase the photocurrent and enhance the performance of the detector.