欢迎您！东篱公司
退出
-
申报数据库
-
立项数据库
-
成果数据库
-
项目获奖数据库
中文摘要：
研究了蓝宝石上非掺杂GaN,p型GaN和p-GaN/n-GaN 3种薄膜材料的声表面波特性。在p型GaN薄膜中观测到中心频率分别为255MHz和460MHz的Rayleigh模和Sezawa模,插入损耗为-42dB。研究了退火工艺的影响。在N2中800K温度下退火,Rayleigh模和Sezawa模的旁带抑制比分别提高了5.5dB和10.2dB。结果表明具有高阻、足够厚度和高表面质量的GaN薄膜在射频单片集成滤波器领域具有广阔的应用前景。
英文摘要：
The characteristics of surface acoustic wave （SAW） on undoped GaN/sapphire, p-GaN/sapphire and p-GaN/n-GaN/sapphire are investigated. For p-GaN grown on sapphire, the Rayleigh wave mode and Sezawa mode are observed with centre frequency of 255 MHz and 460 MHz, and insertion loss of -42 dB are obtained, respectively. In addition, the effect of annealing process is investigated. The sidelobe rejection of the Rayleigh mode and Sezawa mode are improved by 5.5 dB and 10.2 dB respectively after annealing at 800 K in N2 atmosphere. The results show that GaN film with high resistivity, enough thickness and smooth morphology is a very promising material for real RF monolithic integrated filter.
同期刊论文项目
同项目期刊论文
Improving the internalquantum efficiency of green InGaN quantum dots through coupled InGaN/GaNquantu
InGaN quantum dot green light-emitting diodes with negligible blue shift of electroluminescence peak
Metal-organic-vapor phaseepitaxy of InGaN quantum dots and their applications in light-emitting diod
Improving the internal quantum efficiency of Green InGaN quantum dots through coupled InGaN/GaN quan
Study on carrier lifetimes in InGaN multi-quantum well with different barriers by time-resolved phot
Luminescence properties of InxGa1-xN (x similar to 0.04) films grown by metal organic vapour phase e
Growth and characterization of self-assembled low-indium composition InGaN nanodots by alternate adm
Edge dislocation induced self-assembly of InGaN nano-flower on GaN by metal organic vapor phase epit
Study on the saturation characteristics of high-speed uni-traveling-carrier photodiodes based on fie
Design and fabrication of multilayer antireflection coating for optoelectronic devices by plasma enh
Y-branch integrated dual wavelength laser diode for microwave generation by sideband injection locki
期刊信息
位置：