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An 8-Mb Phase-Change Random Access Memory Chip Based on a Resistor-on-Via-Stacked-Plug Storage Cell
  • ISSN号：0741-3106
  • 期刊名称：Ieee Electron Device Letters
  • 时间：0
  • 页码：1270-1272
  • 相关项目：新型纳米复合相变材料的制备及其在相变存储器中的应用
作者： Cai, Daolin|Chen, Houpeng|Wang, Qian|Chen, Yifeng|Song, Zhitang|Wu, Guanping|Feng, Songlin|
同期刊论文项目
新型纳米复合相变材料的制备及其在相变存储器中的应用
期刊论文 59 专利 17
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