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Shallow-donor impurity in zinc-blende InGaN/GaN asymmetric coupled quantum dots: Effect of electric
  • ISSN号：0021-8979
  • 期刊名称：Journal of Applied Physics
  • 时间：0
  • 页码：054305-
  • 相关项目：GaN基量子结构的非线性光学性质
作者： Xia, Congxin|Zeng, Zaiping|Wei, Shuyi|
同期刊论文项目
GaN基量子结构的非线性光学性质
期刊论文 28
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