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湿法刻蚀对Si基片孔点阵及ZnO外延薄膜周期形貌的影响
  • 期刊名称：物理学报
  • 时间：2009.1.1
  • 页码：-
  • 分类：O484.1[理学—固体物理;理学—物理] TN811[电子电信—信息与通信工程]
  • 作者机构：[1]中国科学院物理研究所,北京100190, [2]曲阜师范大学物理工程学院,曲阜273165, [3]清华大学物理系,北京100084
  • 相关基金：国家科学基金（批准号：50532090,60606023和10604007）,国家科技部（批准号：2007CB936203）和中国科学院资助的课题.
  • 相关项目：低维体系中的新奇量子现象
作者： 崔秀芝|张天冲|梅增霞|刘章龙|刘尧平|郭阳|苏希玉|薛其坤|杜小龙|
关键词： ZNO, 分子束外延, Si, 湿法刻蚀, ZnO,molecular beam epitaxy,silicon,wet etching
中文摘要：

利用射频等离子体辅助分子束外延法,在刻有周期性孔点阵结构的Si衬底上生长了ZnO二维周期结构薄膜,系统研究了湿法化学刻蚀对孔形点阵Si（100）,Si（111）基片表面形貌的影响,以及两种初底上ZnO外延薄膜的结晶质量与周期形貌的差异.X射线衍射及扫描电子显微测试结果表明：Si（111）衬底上生长出的ZnO二维周期结构薄膜具有较好的结晶质量与较好的周期性表面形貌.该研究结果为二维周期结构的制备提供了一种新颖的方法.

英文摘要：

A ZnO film with two-dimensional periodic structure was grown on Si substrate by radio-frequency plasma-assisted molecular beam epitaxy.The influence of wet-chemical etching on Si（100） and Si（111） substrates patterned with dot arrays was investigated for achieving a ZnO film with good periodic structure.X-ray diffraction and scanning electron microscopy mesurements demonstrate better crystalline quality and surface morphology of ZnO film grown on Si（111） than that on Si（100）.The results suggest that the growth method is feasible for the fabrication of ZnO film with good periodic structure.

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低维体系中的新奇量子现象
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Si基ZnO薄膜的表面/界面工程与第一性原理计算
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