中文摘要：

采用磁控溅射在玻璃基底上沉积Mg-Zr-O复合介质保护膜,研究Zr掺杂含量对薄膜微观结构和放电性能（着火电压,最小维持电压）的影响。结果发现,沉积的Mg-Zr-O薄膜晶粒细小,微观结构仍然保持MgO的面心立方NaCl型结构,所掺杂的Zr以Zr4＋形式置换固溶于MgO晶格中。当掺杂Zr浓度为2.03at%时,薄膜具有最强的（200）择优取向和最小的表面粗糙度。适当Zr掺杂的Mg-Zr-O薄膜和纯MgO薄膜相比,其着火电压和最小维持电压分别降低了25和15V。

英文摘要：

Mg-Zr-O films for plasma display panels（PDPs） were deposited on glass substrates by magnetron sputtering method.The effects of Zr doping on both the discharge properties（firing voltage and the minimum sustaining voltage） and the microstructure of the Mg-Zr-O films were investigated.The results show that the deposited Mg-Zr-O films retain the NaCl-type structure as the pure MgO crystal.The grain of the films is very fine.The doped Zr exists in the form of Zr4＋ substitution solution in MgO crystal.When the Zr concentration is about 2.03at%,the Mg-Zr-O films have the strongest（200） preferred orientation and the minimum surface roughness.The firing voltage and the minimum sustaining voltage of Mg-Zr-O protective films are reduced at most by about 25 and 15 V,respectively,compared with those of the pure MgO film.