中文摘要：

重离子在SiO2中能产生永久径迹，因此它可能对MOS器件电学特性产生影响。文章用Geant4软件对Au和Sn两种离子进行蒙特卡洛模拟，重点分析高能粒子在si02中的能量沉积及径迹。基于模拟分析，对专门设计的65nmn沟MOSFET器件进行Sn离子辐照实验，发现辐照后Ids和I8明显增大，分析器件辐照前后阈值电压、跨导、沟道电流以及栅漏电流等特性参数变化的原因。

英文摘要：

Heavy ions may have influence on the electronic characteristics of MOS devices since it could generate permanent track effect in SiO2 layers. This paper performs Au and Sn ionic Monte Carlo simulations by using Geant 4 software and then focus on the analysis of energy deposition and track effects of high energy particles in SiO2 layers. Additionally, based on the analysis before, a Sn ionic irradiation experiment has been done on specially designed 65nm n-MOSFET devices and it has been found that an apparent increase before and after irradiation has appeared in Id, and/. This paper aims at analyzing the reasons why various electronic characteristics of those devices, including threshold voltage, transconductance, channel current and gate current, have changed before and after irradiation.