首次对碲锌镉晶体热处理诱生层错的微观结构及形成机理进行了研究。碲锌镉晶体的层错能较高,形成困难,但在热处理过程中富Te相从晶体中心热迁移至表面时在晶内产生了应力,使晶体的晶格处于受拉状态,从而过饱和Te原子插入,导致局部区域原子密排面的层序发生错排,形成稳定的堆垛层错。层错的腐蚀金相蚀坑由一条条倾斜富Te槽构成,这些倾斜富Te槽沿(111)密排面排列成为一条条相互交成60°、120°的直线,其交线方向为[110]晶向。
In this paper, the formation mechanism and microstructure of heat treatment induced stacking faults in CdZnTe crystals are studied. It is shown that etched pits of the heat treatment induced stacking faults on (111) appear as straight lines oriented in three directions,which across each other with the angle of 120°or 60°. The formation of the heat treatment induced stacking faults are related to the stress induced from the thermo-migration of the Te-rich phases in the CdZnTe crystals, redundant Te inserted in the perfect-crystal layer sequence, and destroyed the continuity of the crystal. The rims of the induced stacking faults are composed of Frank dislocations.