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InP-based InGaAs/InAlGaAs digital alloy quantum well laser structure at 2 μ m
  • 期刊名称：Chin. Phys. B
  • 时间：0
  • 页码：60-62
  • 语言：中文
  • 相关项目：采用非矩形量子阱的磷化铟基波长扩展激光器
作者： Gu Yi, Wang Kai, Li Yao-Yao, Li Cheng, Zhang Yo|
同期刊论文项目
采用非矩形量子阱的磷化铟基波长扩展激光器
期刊论文 15 专利 4
同项目期刊论文
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AlInGaAs/InGaAs/InAs strain compensated triangular quantum wells grown by gas source molecular beam
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Structural and photoluminescence properties of highly strain-compensated InAlAs/InGaAs superlattice
中红外半导体光源和探测器件及其应用
双异质结扩展波长InGaAs PIN光电探测器暗电流研究
InP-based InGaAs/InA1GaAs digital alloy quantum well laser structure at 2μm
晶格失配度达2.6%的波长扩展InGaAs/InP光电探测器结构
异质界面数字梯度超晶格对扩展波长InGaAs光电探测器性能的改善