位置：成果数据库 > 期刊 > 期刊详情页
Initial reaction mechanism of nitrogen-doped zinc oxide with atomic layer deposition
  • ISSN号：0040-6090
  • 期刊名称：Thin Solid Films
  • 时间：0
  • 页码：4355-4359
  • 语言：英文
  • 相关项目：原子层淀积高介电常数栅介质的界面层抑制和性能调控
作者： Liu, Han|Sun, Qing-Qing|Wang, Chen|Shi, Yu|Dong, Lin|Ding, Shi-Jin|Zhang, David Wei|Guo, Hao-Wen|
同期刊论文项目
原子层淀积高介电常数栅介质的界面层抑制和性能调控
期刊论文 27
同项目期刊论文
Band Structures of Metal-Oxide Capped Graphene: A First Principles Study
Nonvolatile Metal-Oxide-Semiconductor Capacitors with Ru-RuO (x) Composite Nanodots Embedded in Atom
Ta2O5在Si（100）表面原子层沉积反应机理的密度泛函研究
A novel self-refreshable capacitorless DRAM cell and its extended applications
Investigation of Thermal Stability of Atomic-Layer-Deposited MgO Thin Films on Si(100) Using X-Ray P
Investigation on memory effect of MOS capacitors with Al-2 O-3/Pt-nanocrystals/HfO2
Electronic structure and optical properties of Nb doped Al2O3 on Si by atomic layer deposition
Highly Uniform Bipolar Resistive Switching With Al2O3 Buffer Layer in Robust NbAlO-Based RRAM
Atomic-Layer-Deposited HfLaO-Based Resistive Switching Memories With Superior Performance
Effect of pulse-plated nickel barriers on tin whisker growth for pure tin solder joints
Atomic Layer Deposition of Al2O3 on H-Passivated GeSi: Initial Surface Reaction Pathways with H/GeSi
Density Functional Theory Study on the Reaction Mechanisms of Bis(cyclopentadienyl)magnesium with Hy
Influence of Ta and TaN bottom electrodes on electrical performances of MIM capacitors with atomic-l
Surface reaction mechanism of Y2O3 atomic layer deposition on the hydroxylated Si(100)-2 x 1: A dens
N2和NH3退火对铪铝氧栅介质C-V特性的影响
高介电常数HfO2栅介质的制备及性能
Improvement of Atomic-Layer-Deposited Al2O3/GaAs Interface Property by Sulfuration and NH3 Thermal N
Spectroscopic ellipsometry study of thin NiO films grown on Si (100) by atomic layer deposition