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中文摘要：
报道了在GaN表面以Ni纳米岛结构作为模板,利用电感耦合等离子（ICP）刻蚀制备GaN纳米柱的研究结果。原子力显微镜（AFM）测试结果表明,金属Ni薄膜在快速热退火（RTA）作用下形成了平均直径和高度大约分别为325 nm和70 nm的纳米岛状结构。通过电子扫描显微镜（SEM）照片看出,以GaN表面所形成的Ni纳米岛作为模板图形,通过控制ICP刻蚀时间,在一定的刻蚀时间内（2 min）获得有序的并拥有半极性晶面的GaN纳米柱阵列。这种新颖的半极性GaN纳米柱作为氮化物量子阱或者超晶格结构的生长模板,可以有效减小甚至消除极化效应,提高光电子器件的效率和性能。
英文摘要：
A novel and simple method to fabricate GaN nanocolumns was reported,using inductively coupled plasma（ICP） etching with Ni nano-island masks.Atomic force microscope（AFM） results indicate the formation of Ni nano islands through rapid thermal annealing（RTA） under different temperatures.And the average diameter and height of the Ni nano-island is 325 nm and 70 nm,respectively.Scanning electron microscope（SEM） pictures show that using the pattern of Ni nano-island as the ICP mask,the uniform and ordered GaN nanocolumn arrays with semipolar plane were obtained by controlling the ICP etching time（2 min）.This novel semipolar GaN nanocolumn can be used as the mask of growing quantum well and superlattice with decreased polarization field,which would enhance the performance of optoelectronic devices.
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