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Metal-Semiconductor-Metal Ultraviolet Avalanche Photodiodes Fabricated on Bulk GaN Substrate
  • ISSN号：0741-3106
  • 期刊名称：IEEE Electron Device Letters
  • 时间：2011.9.9
  • 页码：1260-1262
  • 相关项目：高Al组分AlGaN宽禁带半导体量子结构及其光探测器件的基础研究
作者： Xie, F.|Lu, H.|Chen, D. J.|Xiu, X. Q.|Zhao, H.|Zhang, R.|Zheng, Y. D.|
同期刊论文项目
高Al组分AlGaN宽禁带半导体量子结构及其光探测器件的基础研究
期刊论文 79
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