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Roles of V/III ratio and mixture degree in GaN growth CFD and MD simulation study
  • 期刊名称：Chin. Phys. B
  • 时间：2013.1.1
  • 页码：01780101-01780105
  • 相关项目：宽禁带半导体极化诱导能带调控原理及器件应用
作者： Zhou An|Xiu xiangqian|Zhang Rong|Xie Zili|Hua Xuemei et.al.|
同期刊论文项目
宽禁带半导体极化诱导能带调控原理及器件应用
期刊论文 95 会议论文 29 专利 6
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