中文摘要：

采用射频磁控溅射法在石英玻璃衬底上成功制备了不同 C 掺杂浓度的 ZnO∶C 薄膜，借助于 X射线衍射仪（XRD）、霍尔测试（Hall）、X 射线光电子谱（XPS）和拉曼散射光谱（Raman）等测试手段系统研究了 ZnO 薄膜的结构、电学以及拉曼特性并分析了 C 在ZnO 薄膜中存在形式。结果表明，所有薄膜都呈纤锌矿结构并具有高度的 c 轴择优取向。随着 C 掺杂浓度的增加，薄膜的 n 型导电性能不断增强，其主要原因是ZnO 薄膜中的 C 替代 Zn 位起施主作用。

英文摘要：

Different concentration of ZnO∶C thin films were deposited on quartz glass substrates by a radio-fre-quency （RF）magnetron sputtering technique.The structure,Raman and electrical properties of ZnO∶C film were investigated by X-ray diffractometer,Raman scattering spectrum and Hall measurement system.Then, we explore the role of C in the ZnO∶C film.The results indicate that all films perform the ZnO wurtzite struc-ture with preferred c -axis orientation.The n-type conductivity enhances with the increase of C dopant,and the main explanation to be that C substitute for zinc site and act as donor.