中文摘要：

研究了金刚石微粉对碳化硅晶片表面机械抛光质量及去除率的影响。选取粒径均为W0．5～1μm、粒径分布和形貌不同的3种金刚石微粉，配置3种SiC单晶片机械抛光液。通过纳米粒度仪和扫描电镜分别测试了金刚石微粉的粒度分布和微观形貌。使用原子力显微镜测试了SiC晶片机械抛光后表面粗糙度。金刚石微粉的微观形貌越圆滑，粒径分布越集中，抛光后晶片的表面质量越好。金刚石微粉中单个颗粒的表面棱角有利于提高材料去除率。

英文摘要：

The effect of different diamond powder with nanometer sizes on material removal rate （MRR） and the surface quality of SiC substrate in the procedure of mechanical polishing（MP） were investigated. The diamond powder samples were purchased from the commercial market and their size were labeled as W0.5-1μm. Three kinds of polishing slurries were made using the three diamond powder samples which have different size distributions and mierographs. The surface roughness of SiC substrates polished by different abrasives was measured by atomic force microscopy（AFM）. It was found that the smooth nano- diamond particles and concentrated size distribution were favorable to get high surface quality after polishing. The edges and corners were responsible for the high MRR.