位置：成果数据库 > 期刊 > 期刊详情页
Influences of periodic Si delta-doping on the characteristics of n-GaN grown on Si (111) substrate
  • ISSN号：0022-0248
  • 期刊名称：Journal of Crystal Growth
  • 时间：2014.2.1
  • 页码：106-110
  • 相关项目：常关型宽禁带氮化镓MOS场效应晶体管的研究
作者： Lin Jiali|Wu Zhisheng|Liu Yang|Zhang Baijun|
同期刊论文项目
常关型宽禁带氮化镓MOS场效应晶体管的研究
期刊论文 31 专利 7
同项目期刊论文
Si衬底AlGaN/GaN功率开关场效应晶体管研制
Effect of compositionally graded AlGaN buffer layer grown by different functions of trimethylaluminu
Electrical properties of MOCVD grown GaN on Si (111) substrate with low-temperature AlN interlayers
Comparison of Two Types of Recessed-Gate Normally-Off AlGaN/GaN Heterostructure Field Effect Transis
In-situ wafer bowing measurements of GaN grown on Si (111) substrate by reflectivity mapping in meta
Si and Mg pair-doped interlayers for improving performance of AlGaN/GaN heterostructure field effect
GaN nanowire fabricated by selective wet-etching of GaN micro truncated-pyramid
Investigations of leakage current properties in semi-insulating GaN grown on Si(111) substrate with
Vertical-conducting InGaN/GaN multiple quantum wells LEDs with AlN/GaN distributed Bragg reflectors
Improving the Quality of GaN on Si(111) Substrate with a Medium-Temperature/High-Temperature Bilayer
场板结构对AlGaN/GaN HFET电场分布的影响
Investigations of Leakage Current Properties in Semi-insulating GaN Grown on Si (111) Substrate with
Migrationcharacterization of Ga and In adatoms on dielectric surface in selective MOVPE
Enhancement of GaN-Based Light-Emitting Diodes Transferred From Si (111) Substrate Onto Electroplati
表面态对AlGaN/GaN异质结构2DEG影响的模拟分析
A review of GaN-based optoelectronic devices on silicon substrate
The influences of AlN/GaN superlattices buffer on the characteristics of AlGaN/GaN-on-Si (111) templ
增强型GaN MOSFET的制备及其绝缘栅的电荷特性研究
The suppression of background doping in selective area growth technique for high performance normall
Influence of the carbon-doping location on the material and electrical properties of a AlGaN/GaN het
具有逆向导通能力的GaN功率开关器件
Current transport mechanism of AlGaN/GaN Schottky barrier diode with fully recessed Schottky anode
Effect of AlN/GaN superlattice buffer on the strain state in GaN-on-Si(111) system
Si衬底AlGaN/GaN 功率开关场效应晶体管的研制
Normally-off GaN recessed-gate MOSFET fabricated by selective area growth technique
Influence of dry-etching damage on the electrical properties of an AlGaN/GaN Schottky barrier diode
选择区域外延槽栅结构GaN常关型MOSFET的研究
第三代半导体GaN功率开关器件的发展现状及面临的挑战