欢迎您！东篱公司
退出
-
申报数据库
-
立项数据库
-
成果数据库
-
项目获奖数据库
中文摘要：
用自组装的Ni纳米岛做掩模通过ICP刻蚀得到GaN纳米柱,采用扫描电子显微镜（SEM）观测其形貌,室温下光致发光（PL）谱测量研究样品发光特性。结果表明,室温下GaN纳米柱的发光强度是体材料的2.6倍。为了修复刻蚀损伤,用KOH对样品进行湿法处理,发现经KOH处理的纳米柱与处理前相比变得更直,且其发光较处理之前进一步增强。为了研究其原因,分别对KOH处理前后的样品进行变温PL谱的测量,发现湿法处理后发光增强是由于内量子效率的提高引起的。
英文摘要：
GaN nanorods were fabricated by ICP using Ni self-assembled nanodots as etching mask. The morphology was checked by scanning electron microscopy （ SEM） , and the optical property was characterized by the photoluminescence （ PL） spectra at room temperature. The PL intensity of GaN nanorods was enhanced about 2. 6 times compared to that of asgrown GaN films. Then, GaN nanorods were dipped into the KOH solution for 40 min in order to heal the etch damage. After the treatment, the PL intensity was enhanced again. The temperature-dependent PL was measured to estimate IQE. The results show that the enhancement of PL intensity is due to the higher IQE after the KOH treatment.
同期刊论文项目
同项目期刊论文
Investigation of surface-plasmon coupled red light emitting InGaN/GaN multi-quantum well with Ag nan
Bloch surface plasmon enhanced blue emission from InGaN/GaN light-emitting diode structures with Al-
Study of Rashba spin splitting and intersubband spin-orbit coupling effect in AlGaN/GaN quantum well
Investigation of structural and optical anisotropy of m-plane InN films grown on gamma-LiAlO(2)(100)
The growth and properties of m-plane InN epilayer on LiAlO2(100) by metal-organic chemical vapor dep
Ultraviolet emission efficiencies of Al(x)Ga(1-x)N films pseudomorphically grown on Al(y)Ga(1-y)N te
Influence of biaxial strain on near-band-edge optical properties of c- and a-plane wurtzite-InN film
AlGaN-based 330 nm resonant-cavity-enhanced p-i-n junction ultraviolet photodetectors using AlN/AlGa
The parameters in the band-anticrossing model for In (x) Ga1-x N (y) P1-y before and after annealing
Effectr of the V/III ratio during buffer layer growth on the yellow and blue luminescence in undoped
Temperature dependence of the point defect properties of GaN thin films studied by terahertz time do
Large-scale fabrication and luminescence properties of GaN nanostructures by a soft UV-curing nanoim
Investigation of surface plasmon coupling with the quantum well for reducing efficiency droop in GaN
A Band-Gap Energy Model of the Quaternary Alloy In_xGa_yAl_(1-x-y)N using Modified Simplified Cohere
Impact of anisotropic strains on low-frequency dielectric properties and room-temperature polar phas
The Research on GaN Based Multiple Quantum Well LEDs withNanopillar Arrays for EnhancingLight-emitti
A modified simplified coherent potential approximation model of band gap energy of III-V ternary all
期刊信息
位置：