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中文摘要：
通过685～750℃之间进行低温成相，在LaAlO3（LAO）单晶基底上沉积得到了有较大应用前景的涂层导体DyBiO3（DBO）缓冲层。结果表明：所得的缓冲层C轴取向良好，致密、平整、无裂纹。当温度大于750℃时，DBO表面开始变得粗糙。沉积在DBO缓冲层上的YBCO超导层C轴织构的样品，样品表面平整均匀，超导转变温度在90K左右，临界电流密度大于1MA／cm^2。从工业应用角度讲，低温的缓冲层制备具有极大的经济优势，应用前景更为广泛。
英文摘要：
The DyBiO3 （DBO） buffer layer deposited on LaAlO3 （LAO） single crystal substrate was prepared by low temperature processing in the range of 685-750℃. It shows high c-axis texture, high compactness, smooth surface and crack-free, The DBO surface began to coarsen when the temperature was above 750℃.YBCO superconducting layer deposited on DBO-buffered LAO displays highly c-axis texture, high compactness and homogeneous microstructure. The superconducting transition is around 90 K, The critical current density is up to 1 MA/cm^2. From the view of industrialization, the technology of the low temperature processing shows great economical advantages and potential application future.
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