中文摘要：

利用三维器件模拟软件，研究了深亚微米三栅FinFET的短沟道效应，并模拟了阈值电压和亚阈值摆幅随硅鳍（fin）厚度和高度的变化情况。通过优化硅鳍厚度或高度，可以有效的控制短沟道效应。在进一步对深亚微米三栅FinFET的拐角效应进行二维数值模拟的过程中，并未观察到由拐角效应引起的泄漏电流。与传统的体硅CMOS结构有所不同，拐角效应并未使得深亚微米三栅FinFET性能变差，反而提高了其电学性能。

英文摘要：

Short-channel effects of deep sub-micron triple-gate FinFET were investigated by using 3-D device simulation software. The silicon fin＇s size dependence of threshold voltage and subthreshold swing were simulated and calculated. Short-channel effects could be effectively controlled by optimizing either silicon fin thickness or its height. The corner effects in deep sub-micron triple-gate FinFET were studied via 2-D numerical simulation. The calculated results showed that the corner effects didn＇t induce leakage current. In contrast to traditional bulk silicon CMOS transistors, the corner effects do not deteriorate the properties of deep sub-micron triple-gate FinFET, instead it improve the electric performance of this device.