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TiO2表面氧空位对Rup2P/TiO2/ITO薄膜电极光致电荷转移的影响

ISSN号：1000-6818 (ISSN)
期刊名称：Acta Physico-Chimica Sinica
时间：2012.4.4
页码：850-856
分类：O646[理学—物理化学;理学—化学] O647[理学—物理化学;理学—化学]
作者机构：[1]南开大学物理科学学院,天津300071, [2]南开大学泰达应用物理学院,弱光非线性光子学教育部重点实验室,天津300457, [3]中山大学化学与化学工程学院,广州510275
相关基金：国家自然科学基金（50872056 51072082 21173121 11074129）资助项目
相关项目：超快激光构造黑硅材料的光电性能优化及微观机理研究

关键词： Rup2P, TIO2, 表面敏化, Rup2P/TiO2-X/ITO, 光致电荷转移, Rup2P, TiO2 , Surface-sensitization, Rup2P/TiO2-X/ITO, Photo-induced charge transfer

中文摘要：

采用改性的TiCl4水解法制备出三种不同表面性质的TiO2-X（X=5,10,20,X表示加入NaOH的浓度,单位为mo·lL-1）样品.利用（1,10-邻菲咯啉）2-2-（2-吡啶基）苯咪唑钌混配配合物（Rup2P）作为敏化剂,制备出Rup2P/TiO2-5/ITO（铟锡金属氧化物）、Rup2P/TiO2-10/ITO和Rup2P/TiO2-20/ITO表面敏化薄膜电极.测试结果表明三种薄膜电极的光电转换效率Rup2P/TiO2-10/ITO最高,Rup2P/TiO2-20/ITO次之,Rup2P/TiO2-5/ITO最低.利用吸收光谱、表面光电压（SP）谱、荧光光谱和表面光电流作用谱等分析了Rup2P和三种TiO2的能带结构和表面性质;利用光致循环伏安和表面光电流作用谱研究了三种Rup2P/TiO2-X/ITO薄膜电极的光致界面电荷转移过程.结果表明,在光致界面电荷转移过程中,TiO2层表面氧空位对Rup2P/TiO2-X/ITO薄膜电极光致电荷转移产生重要影响.并进一步讨论了Rup2P/TiO2-X/ITO薄膜电极的光电流产生机理.

英文摘要：

The surface properties of TiO2 -X（X=5,10,20,X=[NaOH]（in mol·L^-1 ））samples prepared by modification of hydrolyzed TiCl4 were studied.The surface-sensitized Ru（phen）2 （PIBH）（Rup2P）（phen= phenanthroline,PIBH=pyridyl benzimidazole hybrid）film electrodes Rup2 P/TiO2-5/ITO（indium tin oxide）, Rup2P/TiO2-10/ITO,and Rup2P/TiO2-20/ITO were prepared.Among the three films,the photovoltaic properties of Rup 2P/TiO2-10/ITO were the best and those of Rup2 P/TiO2-5/ITO were the worst.The band structures,and properties on the surfaces of Rup2 P and the three TiO2 samples were analyzed using absorption spectra,surface photovoltage spectra,photoluminescence spectra,and photocurrent action spectra.The photo-induced charge transfer process was studied by cyclic voltammetry under irradiation and photocurrent action spectra.The results revealed the oxygen vacancy at the TiO2 surface was very important for the photo-induced charge transfer process of Rup2P/TiO2-X/ITO.The photocurrent mechanism of Rup2 P/TiO2-X/ITO is discussed.

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