中文摘要：

SiO < 潜水艇 class= “ a-plus-plus ” > 2 /Si 底层广泛地被用来支持由化学蒸汽免职成年或由 micromechanical 准备的二维的 2-D 水晶薄片劈开。2-D 薄片的可见性对 SiO 的厚度很敏感 < 潜水艇 class= “ a-plus-plus ” > 2 层 \h_{{\mathrm { SiO }}_2 }\ ，它不能在 2-D 薄片的存款以后精确被决定。这里，我们表明了一种简单、快、非破坏性的技术精确决定 \h_{{\mathrm { SiO }}_2 } SiO 的 \< 潜水艇 class= “ a-plus-plus ” > 仅仅由有典型 micro-Raman 的光对比测量的 Si 底层上的 2 部 电影共焦的系统。因为它的小侧面的分辨率，击倒到测微计规模，这种技术能被用来存取\h_{{ \mathrm { SiO }} _2 } SiO 上的\<潜水艇class=“ a-plus-plus ”>部分是的 2 /Si 底层由 2-D 水晶薄片盖住，然后进一步决定 2-D 水晶薄片的层数字。这种技术能在那些底层上被扩大到另外的绝缘的多层的底层和 2-D 水晶薄片的层数字决心。

英文摘要：

SiO_2/Si substrate has been widely used to support two-dimensional （2-D） crystal flakes grown by chemical vapor deposition or prepared by micromechanical cleavage. The visibility of 2-D flakes is very sensitive to the thickness of the SiO_2 layer （hsiO_2）, which can not be determined precisely after the deposit of 2-D flakes. Here, we demonstrated a simple, fast and nondestructive tech- nique to precisely determine hsiO_2 of SiO_2 films on Si substrate only by optical contrast measurement with a typical micro-Raman confocal system. Because of its small lateral resolution down to the micrometer scale, this tech- nique can be used to access hsiO_2 on SiO_2/Si substrate that has been partially covered by 2-D crystal flakes, and then further determine the layer number of the 2-D crystal flakes. This technique can be extended to other dielectric multilayer substrates and the layer-number determination of 2-D crystal flakes on those substrates.